Vapor deposition of H.sub.3 PO.sub.4 and formation of thin phosphorus layer on silicon substrates

Abstract

Provision for a source of phosphorus dopant on a silicon wafer, for the subsequent formation of an electrical p-n junction, by the vapor deposition, at atmospheric pressure, of phosphoric acid to form an essentially continuous film on a silicon wafer, said wafer being at room temperature, and the firing of said film to form a phosphorus oxide-silicate-glass layer which will not interfere with any antireflective layer deposited thereon.

Dependencies are inferred from the claim text.