Apparatus for producing a semiconductor device utlizing successive liquid growth
AssigneeHandotai Kenkyu Shinkokai
InventorJun-ichi Nishizawa
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Abstract
An apparatus for producing a semiconductor device of epitaxial growth on a substrate utilizing successive solution growth, in which materials to be successively deposited are being dissolved in bore portions respectively interconnecting between holes of the higher temperature portion and holes of the lower temperature portion in a boat, and in which a cooling jig is coupled with the substrate provided at the hole of the lower temperature portion to effectively conduct substantially main part of heat of the dissolved materials through the substrate.
Claims12
In an apparatus for successively producing at least two semiconductor devices each having a multilayer structure including a plurality of epitaxial layers deposited successively on a substrate by the temperature difference method, the improvement comprising a combination structure having:
- boat means having a plurality of substantially vertically disposed wells for containing solutions to be deposited and corresponding in number to at least the number of epitaxial layers to be deposited,
- temperature difference establishing means for causing said solutions contained in the wells to have different temperatures at their upper and lower portions to establish in each well a downwardly decreasing temperature difference between said upper and lower portions thereof,
- a plurality of substrates spacedly disposed in a horizontal direction,
- horizontally movable substrate conveyor means for conveying said substrates into successive contact with respective lower ends of said plurality of wells upon movement of said conveyor means in said horizontal direction, and
- cooling means included in said establishing means and being disposed under said wells below said substrate conveyor means,
- said cooling means having at least in part a cross sectional area which is surrounded by heat insulating space and has substantially the same area as the lower surface and said substrate and being heat conductive for reducing surface concavity to enhance the flatness of each deposited epitaxial layer by preventing said heat substantially from bypassing said substrate in its downward flow and causing substantially all of the heat from said solution to transmit through said substrate into said cooling means, and
- said temperature difference establishing being operative to hold said different temperatures and temperature difference at each well substantially at their established values not only during each said deposition but throughout the whole time required to produce all said semiconductor devices including before, during and after each movement of said conveyor means.
In an apparatus for successively producing at least two semiconductor devices each having a multilayer structure including a plurality of epitaxial layers deposited successively on a substrate by the temperature difference method, the improvement comprising:
- boat means having a plurality of substantially vertically disposed wells for containing solutions to be deposited and corresponding in number to at least the number of epitaxial layers to be deposited;
- a plurality of substrates disposed in a horizontal direction;
- substrate conveyor means for conveying said substrate into successive contact with respective lower ends of said plurality of wells,
- said solutions contained in the wells each having a downwardly decreasing temperature difference between upper and lower portions thereof, and
- cooling means disposed below said substrate conveyor means to cause a downward flow of heat from said solutions to said cooling means,
- the improvement wherein:
- heat insulation forming and directing means are included as part of one of said conveyor and cooling means and comprise at each depositing well a vertically extending portion disposed squarely under a respective well with an upper horizontal cross sectional size and area corresponding to that of the respective substrate for providing a heat insulating space surrounding said vertical portion to prevent said downward flow of heat substantially from bypassing its respective substrate in its downward flow and to guide substantially all that heat through that substrate and vertical portion into said cooling means while that substrate is under a said well during a temperature differential epitaxial deposition therefrom for eliminating concavity in the surface of each said epitaxial layer as it is deposited and enhancing the flatness thereof.
Dependencies are inferred from the claim text.