Device for epitaxially providing a layer of semiconductor material
AssigneeU.S. Philips Corporation
InventorWillem J. Leswin
Life of this patent
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Abstract
A liquid-phase epitaxial growth device has a reservoir holder (1), a slider (14) movably mounted below the reservoir holder to enable each reservoir (2, 3, 4, 5) to be selectively uncovered so as to allow semiconductor melt in each reservoir to pass through each aperture (15, 16, 17, 18) in the slider, a movable substrate holder (22) for receiving one or more semiconductor substrates (25, 26) that are placeable below each aperture, and a member (19) for receiving semiconductor melt from each aperture when it is uncovered by movement of the substrate holder. A locking mechanism (30, 31, 32, and 33) enables the slider to be locked to the reservoir holder at one or more substantially fixed positions.
Claims9
A device for epitaxially providing at least one layer of semiconductor material on at least one semiconductor substrate, the device having a reservoir holder which contains at least one reservoir open along a lower surface thereof, a slider which has at least one aperture through it and is movably mounted along the lower surface so as to enable each reservoir to be selectively uncovered therealong to allow semiconductor melt in each reservoir to pass through each aperture, a substrate holder which has at least one recess for receiving at least one semiconductor substrate and is movable with respect to both the slider and the reservoir holder such that each recess is placeable below each aperture, and means below the reservoir holder and separate from the substrate holder for receiving semiconductor melt from each aperture when it is uncovered by sufficient movement of the substrate holder, characterized by means for selectively locking the slider to the reservoir holder at at least one substantially fixed position.
Dependencies are inferred from the claim text.