US 4,357,621 AGranted

Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions

AssigneeTokyo Shibaura Electric Co., Ltd.

InventorMinami Takeuchi

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Abstract

A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a first region of first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, an auxiliary emitter region formed, with intervention of the exposed portion of said third region, facing at least a part of the periphery of said main emitter region which does not contact the separate section and a cathode electrode, an auxiliary gate electrode contacting the auxiliary emitter region and enclosing, with intervention of the exposed portion of the third region, at least a part of the periphery of said main emitter region which does not contact the separate section, and a main gate electrode formed on the exposure surface of the third region contacting the side wall of the auxiliary emitter region which does not face the main emitter region. The respective components are successively layered on a first electrode acting as an anode electrode. The diode section includes a fourth region of the second conductivity type formed on the first or anode electrode, a fifth region of the first conductivity type formed on the fourth region, and a second electrode formed on the fifth region and connected to the cathode electrode. The separate section includes a sixth region formed on the first electrode and of the first conductivity type, a seventh region formed on the sixth region and of the second conductivity type and an eighth region formed on the seventh region and of the first conductivity type. The resistance values of the semiconductor layers between the cathode electrode and the second electrode and between the cathode electrode and the auxiliary gate electrode are each 2 to 18 Ohms.

A reverse conducting thyristor comprising in an integral form a thyristor section, a diode section and a semiconductor separator section for preventing an electrical interference between the thyristor section and the diode section, in which said thyristor section includes a first region of a first conductivity type formed on a first electrode;

a second region of a second conductivity type formed on said first region;
a third region of the first conductivity type formed on said second region;
a main emitter region of the second conductivity type formed in said third region;
a cathode electrode formed on said main emitter region;
an auxiliary emitter region formed, with intervention of the exposure layer of said third region, facing at least a part of the periphery of said main emitter region which does not contact said separator section;
an auxiliary gate electrode contacting said auxiliary emitter region and enclosing, with intervention of the exposure portion of said third region, at least a part of the periphery of said main emitter region which does not contact said separate section;
and a main gate electrode formed on the exposure surface of said third region contacting the side wall of said auxiliary emitter region which does not face said main emitter region;
said diode section includes a fourth region of the second conductivity type formed on said first electrode;
a fifth region of the first conductivity type formed on said fourth region;
and a second electrode formed on said fifth region and connected to said cathode electrode;
and said separator section includes a sixth region formed on said first electrode and of the first conductivity type, a seventh region formed on said sixth region and of the second conductivity type and an eighth region formed on said seventh region and of the first conductivity type;
resistor means including a groove between said cathode electrode and said second electrode in which the resistance values of the semiconductor layers between said cathode electrode and said second electrode and between said cathode electrode and said auxiliary gate electrode are each 2 to 18 Ohms.

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Abstract

Claims3