Method for manufacture of ultra-thin film capacitor
AssigneeInternational Business Machines Corporation
InventorsArup Bhattacharyya, Wei-Kan Chu, James K. Howard, Francis W. Wiedman
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Abstract
A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.
Claims6
A method for manufacture of an ultra-thin film capacitor comprising:
- providing a substrate,
- applying to said substrate a metal electrically conductive film to form a composite having a first capacitor electrode,
- applying by sputtering a film selected from the group consisting of metal oxide films and metal nitride films to the surface of said first electrode;
- the metal of said metal oxide and metal nitride films is selected from the group consisting of tantalum, niobium, titanium, vanadium, hafnium and zirconium;
- subjecting the surface of said metal oxide and metal nitride films to ion implantation treatment to implant ions selected from the group consisting of O+ and N+ ions in the surface of said first electrode;
- subjecting said composite to annealing heat treatment to provide an ultra-thin dielectric film adjacent the surface of said first electrode;
- and
- applying an electrically conductive film to said composite to form a counter capacitor electrode.
A method for manufacture of an ultra-thin film capacitor comprising:
- providing a substrate,
- applying to said substrate a metal electrically conductive film to form a composite having a first capacitor electrode,
- applying by sputtering a film selected from the group consisting of metal oxide films and metal nitride films to the surface of said first electrode,
- the metal of said metal oxide or metal nitride films is selected from the group consisting of tantalum, niobium, titanium, vanadium, hafnium and zirconium;
- subjecting the surface of said metal oxide or metal nitride film to ion implantation treatment to implant ions selected from the group consisting of O+ and N+ ions in the surface of said metal oxide or metal nitride film to form a metal oxide or metal nitride layer having a dielectric constant of from about 15 to about 60;
- subjecting said composite to annealing heat treatment of from about 150.degree. C. to about 400.degree. C. for a period of from about 1 to about 5 hours in an ambient atmosphere selected from oxygen and nitrogen to provide an ultra-thin dielectric film having a dielectric constant to film thickness (expressed in Angstroms) ratio of greater than 0.04, adjacent the surface of said first electrode;
- and
- applying a metal electrically conductive film to said composite to form a counter capacitor electrode.
Dependencies are inferred from the claim text.