Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device comprising a semiconductor body having a first pattern of conductive regions on a major surface thereof and a second pattern of conductive tracks crossing over but spaced apart from said first regions and electrically connected thereto only at selected locations, which comprises:

• providing a semiconductor body having a major surface;
• providing a first pattern of conductive regions on said major surface;
• providing an intermediate conductive layer over the major surface of the body and first pattern, which intermediate layer is capable of being selectively etched with respect to the material of the second pattern of tracks and which can adhere well to the material of the first pattern of regions and the second pattern of tracks;
• providing the second pattern of conductive tracks on the intermediate layer;
• selectively etching the intermediate layer using the second pattern of tracks as an etching mask to completely remove the intermediate layer by underetching at least below a first portion of the second pattern of tracks crossing over a portion of the first pattern of conductive regions where no electrical interconnection between the first and second conductive patterns is desired, to only partially remove the intermediate layer by underetching below a second portion of the second pattern of tracks crossing over a portion of the first pattern of conductive regions where an electrical interconnection between the first and second conductive patterns is desired, and to only partially remove the intermediate layer by underetching below a third portion of the second pattern of tracks not crossing over a portion of the first pattern of conductive regions so that the remaining part of the intermediate layer on said major surface and beneath said third portion of the second pattern of tracks forms a pier to support said third portion, at least two separate parts of the first pattern of conductive regions being conductively connected at selected locations by at least a part of the second pattern of tracks, said part of the second pattern being supported at said third portion intermediate said two separate parts of the first pattern by said pier.