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US 4,307,176 AGranted
Method of forming a pattern
AssigneeHitachi, Ltd.
InventorsKozo Mochiji, Shinji Okazaki, Shojiro Asai
Life of this patent
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Abstract
A method of forming a pattern comprising heat-treating a resist film subjected to irradiation with light and thereafter removing an unhardened area of the resist film. Since the heat treatment reduces the film thickness of the unhardened area and hardens a hardened area still more, a pattern on the order of submicrons can be readily formed.
Claims12
A method of accurately forming a microscopic pattern, comprising:
- (a) the step of depositing a positive electron beam resist film on an object surface on which the pattern is to be formed,
- (b) the step of irradiating a desired area of said resist film with an electron beam to increase the solubility of the irradiated area, thereby forming an unhardened irradiated area in said resist film,
- (c) the step of heat-treating said electron beam resist film to approximately 100.degree.-200.degree. C. at a reduced pressure of about 1 to 5 torr to decrease the thickness of the irradiated area by volatization, and
- (d) the step of removing the unhardened area of said electron beam resist film.
1 more element
Dependencies are inferred from the claim text.