Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
AssigneeGeneral Electric Company
InventorVictor A. K. Temple
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Abstract
A semiconductor device which can be turned on at voltage signals applied thereto below a selected voltage magnitude includes a pinch-off region of semiconductor material having a precisely controlled net dopant charge situated in the gate current path of the semiconductor device such that the normal gate current path of the device is pinched-off when the voltage applied to the device equals or exceeds the selected magnitude.
Claims13
a semiconductor switching device for switching on a main current developed by an applied voltage supplied to said device only when said voltage is below a predetermined magnitude, comprising:
- first, second and third regions of semiconductor material of alternating conductivity types, said second region overlying said first region, said third region overlying a substantial portion of said second region, and a conductive layer overlying a portion of the remainder of said second region, said second region providing a control current path therein between said conductive layer and said third region;
- a conductor of predetermined admittance coupled between said second and third regions;
- and
- a controlled pinch-off region situated in the current path of said second region and substantially surrounding the portion of said second region beneath said conductive layer, said pinch-off region exhibiting a charge concentration per unit area selected such that said pinch-off region exhibits high average admittance relative to that of said conductor, said applied voltage supplied to said semiconductor device being between zero and a selected value and said pinch-off region exhibiting a low admittance relative to said conductor when said applied voltage is at least equal to said selected value.
A semiconductor switching device for switching on a main current developed by an applied voltage supplied to said device only when said voltage is below a predetermined magnitude, comprising:
- first, second and third regions of semiconductor material of alternating conductivity types, said second region overlying said first region, said third region overlying a substantial portion of said second region, said second region providing a control current path therein between said third region and the remainder of said second region;
- a conductor of predetermined admittance coupled between said second and third regions;
- and
- a controlled pinch-off region situated in the current path of said second region and substantially surrounding said remainder of said second region, said pinch-off region exhibiting a charge concentration per unit area selected such that said pinch-off region exhibits high average admittance relative to that of said conductor, said applied voltage supplied to said semiconductor device being between zero and a selected value and said pinch-off region exhibiting a low admittance relative to said conductor when said applied voltage is at least equal to said selected value.
Dependencies are inferred from the claim text.