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US 4,304,623 AGranted
Method for forming silicon crystalline bodies
AssigneeInternational Business Machines Corporation
InventorTheodore F. Ciszek
Life of this patent
Estimating the term…
Abstract
Method for forming an elongated silicon crystalline body using a specially designed capillary die. The method uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.
Claims5
Method for growing a silicon crystalline body from a melt comprising:
- providing a capillary die which is wettable by the silicon melt;
- establishing a molten silicon film overlying the top surface of said die;
- growing and pulling a crystalline body from said film wherein the meniscus profile near each edge of the said top surface of the die in narrower and closer to the die surface than the meniscus in the center of the die top surface;
- and
- continuously replenishing said film as said body is being grown and pulled.
2 more elements
Dependencies are inferred from the claim text.