Low temperature microwave annealing of semiconductor devices
AssigneeRockwell International Corporation
InventorsMichael R. Splinter, Richard F. Palys, Moiz M. Beguwala
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Abstract
Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.
Claims5
A process for fabricating a semiconductor device, the device comprising a semiconductor substrate having a major surface including an ion implanted region, characterized in that one fabrication step in the process subsequent to the formation of the ion implanted regions is to direct a beam of microwave radiation at said entire device for annealing the ion implanted regions.
Dependencies are inferred from the claim text.