Process for developing a positive electron resist
AssigneeHoneywell Inc.
InventorJuey H. Lai
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Abstract
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate is disclosed for a positive resist consisting of a copolymer film of poly (methyl alpha-chloroacrylate-co-methacrylonitrile) utilizing a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone.
Claims16
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate wherein said positive resist is a copolymer film of poly (methyl alpha-chloroacrylate-comethacrylonitrile) having a thickness of about 0.3 to 1.0 microns and which has been exposed to sufficient ionizing radiation comprising the step of developing the exposed regions of the resist film to the substrate by means of a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone.
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate wherein said positive resist is a copolymer film of poly (methyl alpha-chloroacrylate-comethacrylonitrile) having a thickness of about 0.3 to 1.0 microns and which has been exposed to sufficient ionizing radiation comprising the steps of:
- purging the atmosphere of said resist with a gas inert to said resist and the developer;
- applying a developing spray to said resist, said spray containing a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone;
- rinsing said developer from said resist;
- and
- drying said resist film with a gas inert to said film.
Dependencies are inferred from the claim text.