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US 4,289,846 AGranted
Process for forming low-reactance interconnections on semiconductors
AssigneeGeneral Electric Company
InventorsEarl L. Parks, Simon A. Zaidel
Life of this patent
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Abstract
Several methods are disclosed for forming an air gap between crossing thin film conductors utilized to interconnect electronic components on a substrate. Each of the methods involves the use of photolithographic techniques to form overpassing conductors on a support material covering the overpassed conductors, followed by removal of the support material. Both deposition and plating techniques are described for forming the overpassing conductors.
Claims3
A method of forming a conductive bridge connecting selected ones of a plurality of thin film conductors located on a substrate comprising:
- A. applying a layer of photosensitive material to the conductors and the substrate, said layer being of a thickness equal to the desired height of the bridges;
- B. selectively exposing and developing the photosensitive material to effect uncovering of a contact region of each of the selected conductors with which the bridge is to come in contact;
- C. depositing a layer of conductive material onto the photosensitive material and the contact regions, said layer being of sufficient thickness to form an electroplating electrode;
- D. applying a layer of photosensitive material onto the layer of conductive material, said layer being of sufficient thickness to prevent electroplating therethrough;
- E. selectively exposing and developing the last applied layer of photosensitive material to effect uncovering of the conductive material spanning the contact regions;
- F. utilizing the conductive material as an electrode and electroplating the uncovered surface areas thereof to the desired bridge thickness to form the bridge;
- and
- G. removing the remaining photosensitive material and the unplated conductive material.
5 more elements
Dependencies are inferred from the claim text.