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US 4,288,283 AGranted
Method of forming a microscopic pattern
AssigneeHitachi, Ltd.
InventorsHiroshi Umezaki, Hideki Nishida, Norikazu Tsumita, Hirozi Yamada, Katsuhiro Kaneko, Nagatugu Koiso
Life of this patent
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Abstract
A method of forming a microscopic pattern wherein the object to be etched is overlaid with a film made of a material which is highly immune to etching and further provided with a reflection reducing film. Thus, the reflection of the irradiating ultraviolet rays by the underlying layer is effectively prevented.
Claims9
A method of forming a microscopic pattern, comprising the steps of:
- (a) depositing a film to effect masking onto an object to-be-etched,
- (b) forming a reflection reducing film on said film to effect masking,
- (c) depositing a photoresist film onto said reflection reducing film,
- (d) forming a photoresist pattern by irradiating a desired portion of said photoresist film with light and thereafter conducing development,
- (e) removing the exposed part of said reflection reducing film and the masking film which is disposed underneath said exposed portion, by employing said photoresist pattern as a mask, and
- (f) removing the exposed part of said object to-be-etched.
3 more elements
Dependencies are inferred from the claim text.