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US 4,286,049 AGranted
Method of forming a negative resist pattern
AssigneeNippon Telegraph & Telephone Public Corporation
InventorsSaburo Imamura, Shungo Sugawara, Hirotsugu Sato
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Abstract
A method for forming a negative resist pattern which applies as a high energy beam-sensitive material a polymer consisting of components expressed by the general structural formula: ##STR1## where: X=halogen or ##STR2## (R.sub.2 is H or CH.sub.3) R.sub.1 =H or CH.sub.3 n=1 to 3 m, l=integers having a relationship of 50.ltoreq.m+l.ltoreq.50,000.
Claims9
A methd of forming a negative resist pattern which comprises the steps of:
- (a) depositing a polymer film sensitive to high energy beams on a substrate;
- (b) exposing the polymer film to high energy beams applied by deep ultraviolet rays, X-rays, electron beams or gamma rays in a prescribed pattern to crosslink the exposed portions of the film;
- and
- (c) removing the portions of the film other than the crosslinked portions with a solvent,
- wherein the polymer is formed of components expressed by the general structural formula:
- ##STR20## wherein X is the same or different groups selected from the group consisting of halogens and groups of the formula ##STR21## wherein R.sub.2 is a hydrogen atom or methyl group;
- R.sub.1 is a hydrogen atom or methyl group;
- n is an integer of 1, 2 or 3;
- and
- l+m are each an integer and the total of all the l and m integers in the polymer are in the range of 50 to 50,000, and m/m+l.gtoreq.0.2.
7 more elements
Dependencies are inferred from the claim text.