Device for growing a crystalline layer on a substrate
AssigneeInternational Standard Electric Corporation
InventorLucien C. De Brouckere
Life of this patent
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Abstract
A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.
Claims5
A device for growing a crystalline layer on a substrate from a liquid medium, said substrate being moved with respect to said liquid medium during layer growth such that the direction of rotation of said substrate with respect to a fixed point is reversed and causing at least one point of said substrate to move in a loop-shaped path, said device comprising:
- a mechanism to impart two substantially rectilinear movements to said substrate to cause said movement thereof including
- a slidably mounted bar to which one of said two rectilinear movements is imparted, said bar having a prolonged part hingedly connected thereto, said prolonged part having the other of said two rectilinear movements imparted thereto.
Dependencies are inferred from the claim text.