Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
AssigneeInternational Business Machines Corporation
InventorChin-An Chang
Life of this patent
Estimating the term…
Abstract
The interdiffusion at the interface between a metallic-type conductor or semiconductor and a second metallic-type conductor or semiconductor in intimate contact therewith due to elevated temperatures is reduced by subjecting a surface of at least one of the materials when at an elevated temperature to a gas which contains at least one component which changes the surface potential and work function of the surface which is subjected to the gas in a direction according to the relative electronegativities of the materials.
Claims20
A method for reducing the interdiffusion when at elevated temperature of a first material and a second material which is adjacent to and in intimate contact with the first material, wherein the electronegativity of the first material is different from the electronegativity of the second material, and wherein each of the first material and the second material is a metallic-type electrical conductive material or a semiconductive material or a mixture thereof which method comprises when at elevated temperature of at least about 100.degree. C. exposing at least one surface of said first material containing CO or O.sub.2 or both, provided that the gas increases the work function of the first material when it is more electronegative than the second material or decreases the work function of the first material when it is less electronegative than the second material, and thereby reducing the interdiffusion of the first and second materials at their interface and at elevated temperature.
Dependencies are inferred from the claim text.