Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
AssigneeU.S. Philips Corporation
InventorsGerardus G. P. van Gorkom, Arthur M. E. Hoeberechts
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Abstract
The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra accelerating energy by means of an electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Such cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.
Claims75
A semiconductor device used as a cathode for generating an electron flow comprising a semiconductor body having a p-n junction, a depletion zone of said p-n junction adjoining at least a surface of said semiconductor body, means for applying a reverse voltage across said p-n junction to generate avalanche multiplication of electrons from said semiconductor body, an electrically insulating layer provided on said surface of said semiconductor body, at least one aperture provided in said insulating layer for exposing at least part of said depletion zone, and electrode means formed on said insulating layer at an edge of said aperture for accelerating electrons through said aperture.
A semiconductor device according to claim 63, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Dependencies are inferred from the claim text.