Large scale semiconductor integrated circuit device

Abstract

A large scale semiconductor integrated circuit device comprising plural transistors and resistors formed in one semiconductor substrate, and many emitter-coupled circuits formed by connecting the transistors and resistors with a double metallic layer on the substrate surface. Groups of these emitter coupled circuits are disposed in the form of arrays with circuits of several groups handling larger power than those of other groups, and resistance values in the emitter coupled circuits of the different groups are selected in accordance with the position and arrangement of each group to compensate for any potential variation between that group and the power supply and ground terminals between the groups and respective input/output terminals. Large scale transistors are provided for outputting the emitter-follower circuits. These groups contain the emitter coupled circuits, and are connected to the input/output terminals by the double metallic wiring layer.

Dependencies are inferred from the claim text.