Double crucible crystal growing process
AssigneeWestern Electric Company, Inc.
InventorsThomas J. Dewees, John S. Fangman, Wen Lin
Life of this patent
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Abstract
The disclosure is directed to a double crucible Czochralski crystal semiconductor growing apparatus (10). An inner crucible (14) floats in a melt within an outer crucible (13) and a single crystal semiconductor billet (23) is pulled from the melt (16) in the inner crucible. An elongated tubular member (26), having at least one small aperture (33) in the wall thereof, provides a channel between the outer and inner crucibles. The tubular member (26) permits flow of the melt in the outer crucible (14) to the inner crucible (13) while inhibiting the diffusion of dopant material from the inner to outer crucible while any gas in the member will pass through the aperture (33).
Claims3
A method of growing a single crystal semiconductor billet from a melt in a first crucible, which melt is replenished by a melt in a second crucible via an elongated communicating channel of such a length as to inhibit back diffusion of the melt therethrough, the method is characterized by:
- permitting any gas in the channel to pass through at least one small aperture in the channel wall into the first and/or second crucibles;
- while
- substantially precluding the flow of the melt through said aperture.
Dependencies are inferred from the claim text.