US 4,239,983 A · Non-destructive charge transfer device differencing circuit

Abstract

A circuit is disclosed for obtaining a quantity of electrical charge carriers equal to and representative of the algebraic difference between the values of two original quantities of electrical charge carriers. The circuit includes two charge coupled device input shift registers. Each of the two shift registers incorporates at least three potential well electrodes and interposed transfer electrodes such that charge packets can be shifted from well to well. One potential well in each of the two shift registers is operated in a floating gate electrode mode, and the two potential wells are connected at a common node which services as the input to a third or output charge coupled device shift register. The two original quantities of electrical charge carriers are represented respectively in each of the two input shift registers by a pair of spatially separated charge packets which when sensed by sequencing them into and out of the potential well under the floating gate electrode provide the algebraic value of the associated quantity of electrical charge carriers. By representing each original charge quantity by two spatially separated pairs of charge packets, positive and negative algebraic values may be representing even though all the charge quantities are made up of charge carriers of the same polarity. Combining the two floating gate electrodes at the common node rectifying input to the third or output shift register produces an algebraic value in the output shift register which represents the difference between the original charge packets.

A charge transfer device differencing circuit for producing a quantity Qc of electrical charge carriers equal to and representative of the algebraic difference between the values of two original quantities of electrical charge carriers Qa and Qb comprising means for producing a first pair of discrete charge packets .vertline.Qa.sup.+ .vertline. and .vertline.Qa.sup.- .vertline. representative of said charge quantity Qa and a second pair of discrete charge packets .vertline.Qb.sup.+ .vertline. and .vertline.Qb.sup.- .vertline. representative of said charge quantity Qb,

first and second charge transfer shift registers having outputs connected to a common node and responsive respectively to said first and second pairs of discrete charge packets for producing voltage changes on said common node representative respectively of the combination of charge packets .vertline.Qa.sup.- .vertline., .vertline.Qb.sup.+ .vertline., .vertline.Qa.sup.+ .vertline. and .vertline.Qb.sup.- .vertline.,
said first and second charge transfer device shift registers each including a semiconductor substrate for sustaining a plurality of potential wells for containing electrical charge carriers and electrodes proximate said substrate for shifting quantities of electrical charge carriers into and out of said potential wells, one of said electrodes of said first shift register and a corresponding one of said electrodes of said second shift register being connected at said common node,
and a third charge transfer shift register connected to said first and second shift registers at said common node and responsive to said voltage changes on said common node for producing a first charge packet quantity .vertline.Qc.sup.+ .vertline. and a second charge packet .vertline.Qc.sup.- .vertline.,
wherein said charge packets .vertline.Qc.sup.+ .vertline. and .vertline.Qc.sup.- .vertline. are representative of a value Qc which is equal to the algebraic difference value Qa-Qb, said third charge transfer shift register including a semiconductor substrate for sustaining at least one potential well for containing charge carriers, a plurality of electrodes proximate said substrate for shifting charge carriers into and out of said at least one potential well, and an input diffusion region in said substrate connected to said common node for producing charge carriers in response to potential levels on said common node, and therein said means for producing said first pair of discrete charge packets designated .vertline.Qa.sup.+ .vertline. and .vertline.Qa.sup.- .vertline. representative of said first charge quantity designated Qa, and said second pair of discrete charge packets designated .vertline.Qb.sup.+ .vertline. and .vertline.Qb.sup.- .vertline. representative of said second charge quantity designated Qb includes means for shifting charge packet .vertline.Qa.sup.- .vertline. and charge packet .vertline.Qb.sup.+ .vertline. respectively into and out of said potential wells proximate said one of said electrodes of said first shift registers connected to said common node and said corresponding one of said electrodes of said second shift register connected to said common node wherein shifting charge packets .vertline.Qa.sup.- .vertline. and .vertline.Qb.sup.+ .vertline. out of said respective potential wells produces a first voltage level change on said common node, said means for shifting thereafter shifting said charge packets .vertline.Qa.sup.+ .vertline. and .vertline.Qb.sup.- .vertline. into said same respective potential wells to produce a second voltage level change on said common node, said resulting voltage value on said common node interacting with said input diffusion causing a corresponding first charge packet .vertline.Qc.sup.+ .vertline. to be produced in said third shift register, and wherein shifting said charge packets .vertline.Qa.sup.+ .vertline. and .vertline.Qb.sup.- .vertline. out of said same respective potential wells produces a third voltage level change on said common node, said means for shifting thereafter shifting said charge packets .vertline.Qa.sup.- .vertline. and .vertline.Qb.sup.+ .vertline. into said same respective potential wells to produce a fourth voltage level change on said common node, said resulting voltage value on said common node interacting with said input diffusion causing a second charge packet .vertline.Qc.sup.- .vertline. to be produced in said third shift register, and wherein said charge packets .vertline.Qc.sup.+ .vertline. and .vertline.Qc.sup.- .vertline. in said third shift register is equal to and representative of said algebraic difference value Qa-Qb.

1 more element

Non-destructive charge transfer device differencing circuit

Life of this patent

Non-destructive charge transfer device differencing circuit

Life of this patent

Abstract

Claims7