Semiconductor integrated circuit device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToyoki Takemoto, Tadao Komeda, Haruyasu Yamada, Michihiro Inoue
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Abstract
An IC device comprising a junction type field effect transistor of a back gate type and a bipolar device such as a bipolar transistor and a resistor made of impurity diffused region, wherein an extremely thin (in the order of 0.05-0.2 .mu.m) impurity doped surface region of a conductivity type same as that of a back gate region is formed at the surface of a surface channel region, and is separated from at least a drain region to sustain high breakdown voltage between gate region and the drain region; the impurity surface region serving to reduce noise and also enabling to achieve satisfactory characteristics of J-FET and also good ohmic characteristics of the resistor.
Claims25
A semiconductor integrated circuit device having on a monolithic substrate:
- a junction-type field effect transistor comprising:
- a gate region of a first conductivity type,
- a source region and drain region which are both formed apart from each other in said gate region and of a second conductivity type that is opposite to said first conductivity type,
- a surface channel region of said second conductivity type and lower resistivity, and formed shallower than said source region and said drain region in a manner to connect said source region and said drain region,
- an impurity doped surface region of said first conductivity type, higher impurity concentration and a shallower depth than said surface channel region and formed in said surface channel region apart at least from said drain region, and
- an insulating film completely covering said impurity doped surface region;
- and
- at least one other semiconductor device.
A semiconductor integrated circuit device having on a monolithic substrate:
- a junction-type field effect transistor comprising:
- a gate region of a first conductivity type,
- a source region and a drain region which are both formed apart from each other in said gate region and of a second conductivity type that is opposite to said first conductivity type,
- a surface channel region of said second conductivity type and lower resistivity and formed shallower than said source region and said drain region in a manner to connect said source region and said drain region,
- an impurity doped surface region of said first conductivity type, higher impurity concentration and a shallower depth than said surface channel region and being formed in said surface channel region apart at least from said drain region, and
- an insulating film completely covering said impurity doped surface region;
- a bipolar transistor;
- and
- a resistor region formed simultaneously with said surface channel region, having the same depth and impurity concentration as said surface channel region.
A semiconductor integrated circuit device having on a monolithic substrate:
- a junction-type field effect transistor comprising:
- a gate region of a first conductivity type,
- a source region and a drain region which are both formed apart from each other in said gate region and of a second conductivity type that is opposite to said first conductivity type,
- a surface channel region of said second conductivity type and lower resistivity and formed shallower than said source region and said drain region in a manner to connect said source region and said drain region,
- an impurity doped surface region of said first conductivity type, higher impurity concentration and a shallower depth than said surface channel region, formed in said surface channel region apart at least from said drain region,
- an insulating film completely covering said impurity doped surface region, and
- a metal gate electrode disposed over said surface channel region with said insulating film in between for inducing minority carriers of said first conductivity type around said impurity doped surface region;
- and
- at least one other semiconductor device.
A semiconductor integrated circuit device having on a monolithic substrate:
- a junction-type field effect transistor comprising:
- a gate region of a first conductivity type,
- a source region and a drain region which are both formed apart from each other in said gate region and of a second conductivity type that is opposite to said first conductivity type,
- a surface channel region of said second conductivity type, lower resistivity and formed shallower than said source region and said drain region in a manner to connect said source region and said drain region,
- an impurity doped surface region of said first conductivity type, higher impurity concentration and a shallower depth than said surface channel region formed in said surface channel region apart at least from said drain region,
- an insulating film completely covering said impurity doped surface region, and
- a metal gate electrode disposed over said surface channel region with said insulating film in between for inducing minority carriers of said first conductivity type around said impurity doped surface region;
- a bipolar transistor;
- and
- a resistor region which is formed simultaneously with the forming of said surface channel region and is of the same depth and impurity concentration as said surface channel region.
Dependencies are inferred from the claim text.