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AssigneeBell Telephone Laboratories, Incorporated
InventorsAdrian R. Hartman, Terence J. Riley, Peter W. Shackle
Estimating the term…
Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zones constituting emitter (19), (23), base (16), (20) and collector zones (17), (21). In one embodiment using high resistivity (75-300 ohm cm) silicon, referred to as .pi. material, for the material of the pocket, one transistor is a PN.pi.P device, and the other is an NP.pi.N. In the PN.pi.P the reverse-biased base-collector pn junction is the interface between the N base zone (16) and the .pi. portion (12) of the collector zone. In the NP.pi.N transistor the base-collector junction is the interface between the lightly doped .pi. extension (14) of the base zone (20) and the N collector zone (21). A connection (32) is provided to the conductive substrate to enable application of a suitable potential thereto.
A composite semiconductor device 10 for a high voltage integrated circuit having a plurality of pockets 12, 14 of monocrystalline semiconductor material of P conductivity type dielectrically isolated from each other by a layer of insulating material 13, 15 underlying the bottom and sides thereof, said pockets being supported in a layer 11 of polycrystalline semiconductor material and having a surface in a common plane of said device,
A composite semiconductor device for a high voltage integrated circuit having a plurality of pockets of monocrystalline semiconductor material of n conductivity type dielectrically isolated from each other by a layer of insulating material underlying the bottom and sides thereof, said pockets being supported in a layer of polycrystalline semiconductor material and having a surface in a common plane of said device,
A composite semiconductor device for a high voltage integrated circuit having a plurality of pockets of monocrystalline semiconductor material of a first conductivity type dielectrically isolated from each other by a layer of insulating material underlying the bottom and sides thereof, said pockets being supported in a layer of polycrystalline semiconductor material and having a surface in a common plane of said device,
Dependencies are inferred from the claim text.