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US 4,231,810 AGranted
Process for producing bi-polar charge coupled devices by ion-implantation
AssigneeSiemens Aktiengesellschaft
InventorsOttomar Jantsch, Jeno Tihanyi
Life of this patent
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Abstract
A charge coupled device (CCD-device) for sensors and memory is produced so as to have a bipolar structure, with the doped regions and zones thereof being produced by ion implantation whereby a greater structure density is attained along with a reduction in the transfer coefficient .epsilon..
Claims8
A process for producing a charge coupled device for sensors and memories comprising:
- (a) providing a semiconductor substrate of a first conductivity type;
- (b) producing regions of a second conductivity type in said semiconductor substrate via ion implantation so as to form a shift channel;
- (c) producing zones of said first conductivity type in said regions via ion implantation;
- said regions and zones being arranged in series, with each region being separated from other regions and each zone being separated from other zones;
- (d) producing a control electrode between an interspace between said zones and above portions of said zones which are adjoin said interspace;
- and
- (e) producing a relatively highly doped region of said second conductivity type at each end of said shift channel via ion implantation.
4 more elements
A process for producing a charge coupled device for sensors and memories comprising the sequential steps:
- (a) applying a first insulating layer in a thickness of about 100 nm to a p-conducting silicon substrate;
- (b) producing first windows in the insulating layer via a photo-lacquer technique;
- (c) implanting n-doping ions in said first window with a kinetic energy of about 300 KV and in a implantation dose of about 8.times.10.sup.12 ions cm.sup.-2 ;
- (d) implanting p-doping ions in said first window with a kinetic energy of about 35 KV and in an implantation dose of about 10.sup.11 ions cm.sup.-2 ;
- (e) applying a second insulating layer on the resulting arrangement and providing second windows therein via a photo-lacquer technique so as to provide secondary contacts;
- (f) applying a layer of doped polysilicon and producing third windows therein;
- (g) vapour depositing a layer of aluminium over the resulting structure and lifting-off portions of the aluminium layer not on said secondary contacts;
- (h) applying a further photo-lacquer layer over the entire arrangement and producing fourth windows between spaced apart secondary contacts;
- (i) implanting n-doping ions in said fourth windows with a kinetic energy of about 100 KV and with an implantation dose of about 8.times.10.sup.12 ions cm.sup.-2 ;
- (j) removing remaining portions of said aluminium layer;
- (k) oxidizing said polysilicon layer into an oxide layer;
- (l) producing fifth windows for aluminium contacts;
- (m) vapour depositing a layer of aluminium on the resultant structure;
- (n) fixing aluminium paths from said aluminium layer;
- and
- (o) applying a protective oxide layer over the resultant structure.
13 more elements
Dependencies are inferred from the claim text.