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US 4,230,791 AGranted
Control of valley current in a unijunction transistor by electron irradiation
AssigneeGeneral Electric Company
InventorsHing C. Chu, Y. S. Edmund Sun
Life of this patent
Estimating the term…
Abstract
An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.
Claims10
A method for changing the valley current of a unijunction transistor of the type including an emitter-base junction comprising:
- exposing at least said emitter-base junction of said unijunction transistor to lattice defect causing radiation for a time sufficient to change said valley current of said unijunction transistor.
Dependencies are inferred from the claim text.