Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors
AssigneeBell Telephone Laboratories, Incorporated
InventorsRobert L. Hartman, Louis A. Koszi, Cyril J. Mogab, Bertram Schwartz
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Abstract
Plasma etching is described as a selective etch for dielectric masks such as SiO.sub.2, Si.sub.3 N.sub.4 and certain photoresists in the presence of native oxides of Group III-V compound semiconductors. This process can be used in the fabrication of mesa junction lasers and Burrus light emitting diodes.
Claims14
A method of selectively removing a layer of dielectric material from a surface of a Group III-V compound semiconductor without also removing a layer of native oxide on said surface by subjecting both of said layers simultaneously to plasma etching in an atmosphere effective to remove said dielectric layer without attacking said native oxide or said Group III-V semi-conductor.
A method of forming a patterned native oxide layer on a surface of a Group III-V compound semiconductor body comprising the steps of:
- (a) forming on said surface a dielectric layer which can be selectively plasma etched relative to said body and to a native oxide layer to be subsequently formed thereon;
- (b) patterning said dielectric layer to form windows which expose underlying portions of said surface;
- (c) forming a native oxide layer on said exposed portions;
- and (d) subjecting said body and both of said layers simultaneously to plasma etching in an atmosphere effective to remove said dielectric layer without attacking said native oxide or said body.
Dependencies are inferred from the claim text.