Production of thin layers of polycrystalline silicon on a liquid layer containing a reducing agent
AssigneeRhone-Poulenc Industries
InventorDidier Anglerot
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Abstract
Thin layers of polycrystalline silicon are formed atop a metal substrate, by reducing a gaseous silicon containing compound with metallic zinc, in liquid state, and in the presence of at least one other metal which is also in liquid state, same being either tin, lead, gold, silver, antimony and/or bismuth. The reaction is conducted under conditions such that the zinc compound product of reduction is also in gaseous state.
Claims26
A process for the production of elemental silicon crystals capable of being directly utilized in the fabrication of photovoltaic devices, which comprises introducing a gaseous silicon containing compound, in the absence of moisture and oxygen, into contact with a reaction medium comprising metallic zinc, in liquid state, and at least one second metal, also in liquid state, selected from the group consisting of tin, lead, gold, silver, antimony and bismuth, in a manner sufficient to react and reduce said silicon containing compound with the zinc constituent of said liquid metal mixture and to yield the resulting zinc compound product of reduction in the gaseous state.
Dependencies are inferred from the claim text.