Process for manufacturing a ferroelectric device and devices manufactured thereby
AssigneeTechnovation, Inc.
InventorGeorge A. Rohrer
Life of this patent
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Abstract
A process for manufacturing a ferroelectric device includes the steps of chemically cleaning a substrate, followed by radio frequency etching of the substrate. The substrate is then pre-heated. A first electrical contact is then formed on the substrate, and over a portion of the first electrical contact there is vapor deposited a stable thin film of potassium nitrate. Then a second electrical contact is formed over at least a part of the thin film of potassium nitrate. A covering of silicon monoxide is then vacuum deposited over the assemblage of the first and second electrical contacts and the potassium nitrate. The assemblage is then annealed for approximately twenty-four hours at a temperature of approximately 160.degree. C.
Claims18
A process for manufacturing a ferroelectric device, comprising the steps of:
- forming a first electrical contact;
- forming, by vapor deposition performed in a vacuum at a pressure no greater than 1.times.10.sup.-5 Torr and at a temperature of from about 390.degree. C. to 440.degree. C., a stable thin film of potassium nitrate over at least a portion of said first electrical contact;
- relieving said vacuum to a pressure of approximately one atmosphere with a dry predetermined gas for a first predetermined period of time;
- reapplying said vacuum;
- forming a second electrical contact over at least a portion of said stable thin film of potassium nitrate;
- vacuum depositing a covering of silicon monoxide over said first electrical contact, said thin film of potassium nitrate, and said second electrical contact;
- and
- heating said first and second electrical contacts, said thin film of potassium nitrate, and said covering of silicon monoxide for a second predetermined period of time and at a predetermined temperature.
Dependencies are inferred from the claim text.