Method of epitaxial growth employing electromigration
AssigneeMassachusetts Institute of Technology
InventorsHarry C. Gatos, Lubomir L. Jastrzebski
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Abstract
A method of liquid phase epitaxial (LPE) growth of, for example, a semiconductor material or an oxide material whereby growth upon a seed in a seed-solution system is affected by passing electric current in an appropriate direction to effect migration of the materials to the growth interface or away from the interface and then cause deposition of desired materials upon said growth interface.
Claims24
A method of epitaxial growth of a material predominantly by electromigration, that comprises subjecting the substances from which said material is formed to a high temperature to create a liquid solution that includes the constituents of the material;
- bringing a substrate in contact with the solution, there being a solute boundary layer in the solution immediately adjacent the substrate;
- creating an electric field in the solution in an appropriate direction to cause electromigration of at least one of the solute and the solvent that constitute said solution to establish in the solution adjacent the interface between the solution and the substrate a supersaturated solution of said constituents which precipitate on the substrate at said interface by virtue of the condition of supersaturation and effect epitaxial growth thereon;
- establishing and maintaining the parameters of the system at values at which growth is achieved mostly by virtue of said electromigration, said parameters comprising the temperature of the solution, the solute boundary layer thickness in the solution which is kept relatively large by minimizing convection in the solution, the thickness of the substrate and carrier concentration in the substrate, the thickness of the substrate being kept at a value which for the given system, and together with the other parameters of the system, renders the effect of the electromigration dominant and renders the effect of Peltier cooling insignificant;
- and
- thereby epitaxially growing a layer on said substrate.
Dependencies are inferred from the claim text.