Ionized-cluster deposited on a substrate and method of depositing ionized cluster on a substrate
AssigneeFutaba Denshi Kogyo K.K.
InventorToshinori Takagi
Life of this patent
Estimating the term…
Abstract
The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.
Claims20
A method of depositing a film on a substrate which comprises the steps of positioning in a high vacuum region at least one container for holding the material to be vaporized, an ion extraction electrode containing an electron emission source and a substrate on which the film of said material is to be deposited, applying an acceleration voltage between the container and the extraction electrode, said container having a positive potential and the extraction electrode having a negative potential, vaporizing the material disposed within the container by heating said material so that the vapor pressure within the container is at least ten times greater than that of the high vacuum region, ejecting the vapor from said container into the high vacuum region, thereby forming aggregates or clusters of atoms or molecules by adiabatic expansion, irradiating the aggregates or clusters with an electron beam from the electron emission source contained within the ion extractor electrode to form aggregate or cluster ions and accelerating the cluster ions toward the substrate to form a deposited film thereon.
A method of depositing a film on a substrate which comprises the steps of positioning in a high vacuum region maintained at a gas pressure of less then 10.sup.-4 Torr at least one container for holding the material to be vaporized, an ion extraction electrode containing an electron emission source and a substrate on which the film of said material is to be deposited, applying an acceleration voltage between the container and the extraction electrode, said container having a positive potential and the extraction electrode having a negative potential, vaporizing the material disposed within the container by heating said material so that the vapor pressure within the container is at least ten times greater than that of the high vacuum region, ejecting the vapor from said container into the high vacuum region, thereby forming aggregates or clusters of atoms or molecules by adiabatic expansion, irradiating the aggregates or clusters with an electron beam from the electron emission source contained within the ion extractor electrode to form aggregate or cluster ions and accelerating the cluster ions toward the substrate to form a deposited film thereon.
Dependencies are inferred from the claim text.