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US 4,139,906 AGranted
Switch for fault tolerant bubble domain memory systems
AssigneeRockwell International Corporation
InventorThomas T. Chen
Life of this patent
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Abstract
There is provided an improved switching arrangement for controlling the interaction of magnetic bubble domain propagation loops in order to provide a large, serial storage loop which is fault tolerant and has improved operating characteristics. The switch provides on-chip correction capability and, as well, enhanced switching capability to render defective loops or propagation path portions separable in a positive manner.
Claims6
A magnetic bubble domain device system comprising,
- first propagation path means for magnetic bubble domains,
- second propagation path means coupled to a first location in said first propagation path means and disposed adjacent to a second location in said first propagation path means.
- third propagation path means coupled to a third location in said first propagation path means and disposed adjacent to a fourth location in said first propagation path means, and
- conductor means including a closed loop,
- a first portion of said closed loop associated with said second propagation path means and said second location in said first propagation path means,
- a second portion of said closed loop associated with said third propagation path means and said fourth location in said first propagation path means,
- a third portion of said closed loop spaced apart from all of said propagation path means.
4 more elements
Dependencies are inferred from the claim text.