Pattern-forming materials having a radiation sensitive chalcogenide layer and a method of forming patterns with such materials
AssigneeNippon Telegraph & Telephone Public Corporation
InventorsAkira Yoshikawa, Haruo Nagai, Osamu Ochi, Kazuko Nakano, Yoshihiko Mizushima
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Abstract
A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.
Claims3
A pattern-forming material comprising a radiation sensitive chalcogenide layer disposed on a substrate;
- said chalcogenide layer consisting of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed on said amorphous layer.
Dependencies are inferred from the claim text.