US 4,100,879 AGranted

Device for epitaxial growing of semiconductor periodic structures from gas phase

OwnerGrigory Borisovich Goldin, Valentin Petrovich Khlebnikov +11inventors

InventorsGrigory Borisovich Goldin, Valentin Petrovich Khlebnikov, Jury Vasilievich Jushkov, Vadim Nikolaevich Maslov, Oleg Evgenievich Korobov, Vladimir Petrovich Kuklev, Vladimir Grigorievich Demyanets, Ljudvig Alexandrovich Dolomanov, Emilia Stanislavovna Kudeyarova, Vladimir Viktorovich Nechaev, Ellin Petrovich Bochkarev, Nikolai Georgievich Voronin, Jury Anatolievich Drozdov

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Abstract

A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.

A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprising:

a vertical tubular reaction vessel filled with gas and having an inlet and an outlet for said gas containing an agent for carrying out the chemical reaction;
a first disk located in said vessel and having an external surface and an operational surface, at least one substrate being placed near its periphery;
a first electric motor for rotating said first disk about the vertical axis of said vessel, which is located outside vessel and mechanically connected to said first disk;
at least two sources of substances forming the layers of said semiconductor periodic structure being grown;
a second disk located in said vessel near said first disk and coaxial thereto, said second disk having a diameter equal to the diameter of said first disk, said second disk having an external surface and an operational surface parallel to said operational surface of said first disk and holding at least two said substance sources adjoining each other and alternating in the direction of rotation of said second disk about said vertical axis of said vessel;
a second electric motor for rotating said second disk about said vertical axis of said vessel, which is located outside said vessel and mechanically connected to said second disk;
a drive for shifting a disk along said vertical axis of said vessel and located outside the vessel and mechanically connected to one of said disks;
a heater of a substrate located in said vessel near said external surface of said first disk;
a heater of sources located in said vessel near said external surface of said second disk;
both said heaters having a flat heating front and ensuring a temperature field with flat isothermal surfaces parallel to said operational surfaces of said disks;
at least one of said sources being a first semiconductor material with composition corresponding to the composition of the first group of layers of said periodic semiconductor structure being grown;
at least the second of said sources being made of a second semiconductor material with composition corresponding to the composition of the layers of said structure;
said disks being located with a clearance between the surfaces of said substrate and a respective source, selected from an interval from 50 microns to 5 mm.

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Abstract

Claims16