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US 4,086,642 AGranted
Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device
AssigneeHitachi, Ltd.
InventorsIsao Yoshida, Ryoichi Hori, Hiroo Masuda, Osamu Minato, Jun Etoh, Masaaki Nakai
Life of this patent
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Abstract
A protective circuit comprises a metal-oxide-semiconductor field effect transistor (MOSFET) to be protected, and a depletion-type MOSFET the gate and source of which are connected to each other and the souce of which is connected to the gate of the MOSFET to be protected, whereby the protective circuit which is suitable for a high-speed operation is completed.
Claims4
A protective circuit for a metal-oxide-semiconductor field effect transistor comprising:
- an input terminal to which input signals are applied;
- and
- a depletion-type metal-oxide-semiconductor field effect transistor the gate and source of which are connected to each other, the source of which is connected to the gate of the transistor to be protected, and the drain of which is coupled to said input terminal.
Dependencies are inferred from the claim text.