CCD input and node preset method
AssigneeTexas Instruments Incorporated
InventorsDennis D. Buss, Stephen P. Emmons, James B. Barton
Life of this patent
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Abstract
MOSFET structures are frequently used to establish the charge level in the first potential well of a CCD in accordance with an external voltage. When employed conventionally there exists a finite amount of charge under the MOSFET gate at the instant of turnoff. An indeterminate amount of this charge flows into the first potential well thereby giving rise to an uncertainty in the amount of charge in the well. Use of the invention disclosed eliminates this source of uncertainty.
Claims9
A method of inputting charge packets into a charge coupled device structure comprising a semiconductor substrate, a minority carrier charge source region disposed in said substrate near one surface thereof, a minority carrier charge storage region in said substrate near said one surface and spaced apart from said charge source region, an insulating layer disposed on said one surface, and a signal electrode disposed on said insulating layer over said space between said source region and said storage region, wherein each of said charge packets comprises a quantity of charge inversely proportional to the magnitude of an analog input signal comprising the steps of:
- a. simultaneously applying:
- a source voltage to said charge source of a magnitude smaller than the smallest magnitude of said analog input signals, and a predetermined voltage to said signal electrode of a magnitude which prevents charge flow between said charge source and said charge storage region;
- then
- b. applying said analog input signal to said signal electrode;
- and then
- c. increasing the magnitude of said source signal to a value greater than that of the magnitude of said input signal to thereby trap a minority carrier charge packet in said charge storage region of a magnitude inversely proportional to the magnitude of said input signal.
A method of inputting charge packets into a charge coupled device structure comprising a semiconductor substrate, a minority carrier charge source region disposed in said substrate near one surface thereof, an insulating layer disposed on said one surface, and a plurality of transfer electreodes serially disposed on said insulating layer to form a charge propagation channel, said plurality including a first transfer electrode spaced apart from said charge source region, and a signal electrode disposed on said surface over said space between said charge source region and said first transfer electrode wherein each of said charge packets comprises a quantity of charge inversely proportional to the magnitude of an analog input signal, comprising the steps of:
- a. simultaneously applying:
- a source voltage to said charge source of a magnitude less than the smallest magnitude of said analog input signals, a first clocking signal to said first transfer electrode of a magnitude greater than the largest magnitude of said analog input signal, and a predetermined voltage to said signal electrode of a magnitude which prevents charge transfer between said charge source and the substrate region beneath said first phase electrode;
- then
- b. applying said analog input signal to said signal electrode;
- and then
- c. increasing the magnitude of said source voltage to a value greater than the magnitude of said input signal to thereby trap a minority carrier charge packet under said first transfer electrode of a magnitude inversely proportional to the magnitude of said input signal.
Dependencies are inferred from the claim text.