Charge coupled differential amplifier for transversal filter

A charge coupled device transversal filter comprising:

• a. a semiconductor substrate having an insulating layer on one surface thereof;
• b. charge carrier source means in said substrate for injecting signal charge packets into said substrate in response to a sampled analog voltage signal v.sub.in (nTc) where Tc is the sampling period,
• c. a plurality of charge transfer electrode means on said insulating layer and overlying a signal propagation channel defined in said substrate for propagating said signal charge packets down said channel in response to clock signals applied thereto, said electrode means including N split electrodes having first and second sections over preselected portions of said channel, each of said split electrodes defining a weighting coefficient hm;
• d. a second charge carrier source in said substrate;
• e. first and second gate electrodes on said insulating layer and spaced apart from each other, said first gate electrode lying over a substrate region adjacent to said second charge carrier source;
• f. coupling means electrically coupling said first gate electrode to all of said first sections of said split electrodes, and coupling said second gate electrode to all of said second sections of said split electrodes;
• g. a doped region in said substrate located between said first and second gate electrodes;
• h. clock means for selectively applying clock pulses to said second charge carrier source and said first and second gate electrodes to inject convolution charge packets proportional to ##EQU3## into said doped region and said substrate under said second gate electrode.

A charge coupled device transversal filter comprising:

• a. a semiconductor substrate having an insulating layer on one surface thereof;
• b. charge carrier source means in said substrate for injecting signal charge packets into said substrate in response to a sampled analog voltage signal v.sub.in (nTc) where Tc is the sampling period;
• c. a plurality of charge transfer electrode means on said insulating layer and overlying a signal propagation channel defined in said substrate for propagating said signal charge packets down said channel in response to clock signals applied thereto, said electrode means including N split electrodes having first and second sections over preselected portions of said channel, each of said split electrodes defining a weighting coefficient hm;
• d. a second charge carrier source in said substrate;
• e. first and second gate electrodes serially disposed on said insulating layer, said first gate electrode lying over a substrate region adjacent to said second charge carrier source;
• f. coupling means electrically coupling said first gate electrode to said first sections of said split electrodes, and coupling said second gate electrode to said second sections of said split electrodes;
• g. clock means for selectively applying clock pulses to said second charge carrier source and said first and second gate electrodes to inject convolution charge packets proportional to ##EQU4## into said substrate under said second gate electrode.

A charge coupled device transversal filter comprising:

• a. a semiconductor substrate having an insulating layer on one surface thereof;
• b. charge carrier source means in said substrate for injecting signal charge packets into said substrate in response to a sampled analog voltage signal v.sub.in (nTc) where Tc is the sampling period;
• c. a plurality of charge transfer electrode means on said insulating layer and overlying a signal propagation channel defined in said substrate for propagating said signal charge packets down said channel in response to clock signals applied thereto, said electrode means including N split transfer electrodes having first and second sections over preselected portions of said channel, each of said split electrodes defining a weighting coefficient hm;
• d. a second charge carrier source insaid substrate;
• e. first and second split gate electrodes serially disposed on said insulating layer, said first split gate electrode lying over a substrate region adjacent to said second charge carrier source, each of said split gate electrodes having first and second sections;
• f. coupling means electrically coupling said first section of said first split gate electrode to said second section of said second split gate electrode and to said first sections of all of said split transfer electrodes, and coupling said second section of said first gate electrode to said first section of said second gate electrode and to said second sections of all of said split transfer electrodes;
• g. clock means for selectively applying clock pulses to said second charge carrier source and said first and second gate electrodes to inject convolution charge packets proportional to ##EQU5## into said substrate under one of the sections of said second gate electrode.