Nitrogen-free anionic and non-ionic surfactants in a process for producing a haze-free semiconduct
AssigneeWacker-Chemitronic Gesellshaft fur Elektronic Grundstoffe mbH
InventorsRudolf Griesshammer, Helmut Kirschner, Gunther Lechner
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Abstract
Process for making haze-free surfaces of semiconductor bodies which comprs a first step of polishing the surface by means of a polishing agent containing at least one member of the group consisting of quartz, silica, silicates and fluosilicates, and a second step of polishing the surface by means of a polishing agent containing in addition to the above defined agents from 0.1 to 10% by weight calculated on the polishing agent of a nitrogen-free surfactant selected from the group consisting of anionic and non-ionic surfactants, and a mixture thereof.
Claims10
In a process for the production of a semiconductor having a haze-free surface by polishing the semiconductor with a polishing agent containing at least one member of the group consisting of quartz, silica, silicates and fluosilicates, the improvement which comprises further polishing the semiconductor in a second polishing step with a modified polishing agent containing said first-mentioned polishing agent and from 0.1 to 10% by weight, calculated on the weight of said first-mentioned polishing agent, of a nitrogen-free surfactant selected from the group consisting of anionic and non-ionic surfactants and a mixture thereof.
Dependencies are inferred from the claim text.