Process for preparing haze free semiconductor surfaces and surfaces so made
AssigneeWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
InventorIngolf Lampert
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Abstract
Process for producing haze free semiconductor surfaces, especially surfaces of (111)-oriented gallium arsenide, by polishing, which comprises subjecting the surfaces to the polishing action of a mixture of (a) an aqueous suspension containing one or several polishing agents selected from quartz, silica, a silicate and a fluosilicate, and having a pH within the range of from 6 to 8 and, (b) an aqueous solution of hydrogen peroxide having a pH likewise ranging from 6 to 8, the latter being present in an amount of 2 to 15% by weight of H.sub.2 O.sub.2. The invention also relates to the haze free semiconductor surfaces so made.
Claims7
A process for preparing haze free 111-oriented gallium arsenide surfaces by polishing, which comprises subjecting the surfaces to the polishng action of (a) an aqueous suspension containing a polishing agent of the group consisting of quartz, silica, a silicate, a fluosilicate and a mixture thereof, having a pH range from 6-8, in mixture with (b) an aqueous solution of 2-15% by weight of hydrogen peroxide likewise having a pH of 6-8.
Dependencies are inferred from the claim text.