Device for epitaxial growing of semiconductor periodic structures from gas phase

A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprising:

• a pressure-tight reactor tilted at an angle between its longitudinal axis and the horizontal plane, which is selected from an interval of from 10.degree. to 80.degree., and filled with gas containing an agent for carrying the chemical transport reaction;
• an electric motor for rotation of said reactor about its said longitudinal axis, located outside the reactor and kinematically connected to the latter;
• at least two sources of substance, which are made of different solid semiconductor materials and located inside said reactor in one plane and adjacent to each other;
• at least one substrate located inside said reactor in the vicinity of said substance sources;
• at least one group of elements, located inside the reactor and comprising a holder of said at least two substance sources, a unit for holding at least one said substrate and a device for maintaining a constant clearance between the surfaces of said substrate and said sources;
• a heater of said substance sources, located outside said reactor in the vicinity of said sources;
• a heater of said substrate, located outside said reactor and in the vicinity thereof and producing together with said heater of said sources the required difference in temperature between said sources and said substrate;
• said holder of said sources of substances of each of said group of elements, being rigidly secured inside said reactor in a position ensuring perpendicularity of the surfaces of said sources with respect to said longitudinal axis of said reactor;
• said unit for holding said substrate of each said group of elements, located above said holder of said sources free with respect to said reactor and at a distance from said holder, which depends upon the required clearance between said surfaces of said substrate and sources;
• said device for maintaining a constant clearance between said surfaces, which sets said clearance selected from an interval of from 50 microns to 1 mm.