Method of forming a thin film capacitor with a manganese dioxide layer
AssigneeCorning Glass Works
InventorPeter L. Young
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Abstract
A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having an electrically conductive film electrode formed thereon is provided and a layer of manganese dioxide is applied over the conductive film. The composite so formed is disposed within an oxygen-inert gas containing vacuum environment. A film of tantalum oxide is applied over the manganese dioxide layer by r-f sputtering of a tantalum oxide target within the vacuum environment while the dielectric substrate, conductive film, and manganese dioxide layer are being cooled. The composite may then be removed from the oxygen-inert gas containing vacuum environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.
Claims9
A method of forming a capacitor comprising the sequential steps of
- providing a dielectric substrate,
- applying to said dielectric substrate an electrically conductive film to form a first capacitor electrode,
- applying a layer of manganese dioxide over said electrically conductive film,
- disposing said substrate and conductive film within a vacuum environment containing an oxygen-inert gas mixture,
- r-f sputtering a film of tantalum oxide of desired thickness over said layer of manganese dioxide within said vacuum environment, said tantalum oxide being sputtered from a tantalum oxide target,
- cooling said dielectric substrate, conductive film and layer of manganese dioxide while said film of tantalum oxide is being sputtered thereon, and thereafter
- applying an electrically conductive film over said film of tantalum oxide to form a counter capacitor electrode.
Dependencies are inferred from the claim text.