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US 4,062,747 AGranted
Native growth of semiconductor oxide layers
AssigneeBell Telephone Laboratories, Incorporated
InventorsRobert Pang Heng Chang, Ashok Kumar Sinha
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Abstract
An amorphous, stoichiometric, native, semiconductor oxide layer, with a sharp interface between the oxide layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate.
Claims12
A method of growing a native semiconductor oxide layer comprising:
- A. placing a semiconductor substrate in an oxygen environment comprising oxygen at a pressure of less than 9 .times. 10.sup.-3 torr;
- B. directing a beam comprising essentially electrons of density between 10.sup.8 electrons/cc and 10.sup.12 electrons/cc toward the substrate;
- and
- C. biasing the substrate between 0.2 and 500 volts positive with respect to the source of electrons,
- whereby a native semiconductor oxide layer is grown.
2 more elements
Dependencies are inferred from the claim text.