Method of patterning styrene diene block copolymer electron beam resists
AssigneeTexas Instruments Incorporated
InventorTerry L. Brewer
Life of this patent
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Abstract
Disclosed is a method of forming patterned electron beam resists from styrene-diene block copolymers and the resists formed thereby. A thin film of a styrene-diene block copolymer is applied to a support and is subjected to an electron beam scan. An electron beam irradiates a portion of the copolymer film according to a programmed pattern; the copolymer cross links where irradiated, thus causing the irradiated portion of the copolymer to become insoluble in a solvent. The balance of the copolymer remains soluble in the solvent, dissolves and is removed, resulting in the desired pattern of openings.
Claims8
The method of forming a patterned negative high energy beam resist, comprising the steps of:
- a. forming a thin film of a styrene-diene block copolymer on a support;
- b. scanning said thin film with a high energy beam in a predetermined pattern requiring resolutions of less than 1 micron at a speed of at least 5 .times. 10.sup.-6 coulombs per cm.sup.2 to cause the irradiated portion of said copolymer to cross link where irradiated by said high energy beam;
- and,
- c. dissolving the uncross linked portion of said copolymer with a solvent which dissolves and removes the uncross linked copolymer, thereby leaving said cross linked portion of said copolymer on said support with openings in a desired pattern.
The method of forming a negative electron beam resist, comprising the steps of:
- a. mixing a styrene diene block copolymer having an average molecular weight of between 10,000 and 500,000 with sufficient aromatic solvent to produce a solution;
- b. placing said solution on a support;
- c. drying said solution to remove said solvent, thereby leaving a thin styrene-diene copolymer film on said support;
- d. scanning said thin film with an electron beam in a predetermined pattern requiring resolutions of at least 0.7 microns of at least 5 .times. 10.sup.-6 coulombs/cm.sup.2 to cause the irradiated portion of said copolymer to cross link where irradiated by said electron beam;
- and,
- e. dissolving the said uncross linked portion of said copolymer with a solvent which removes the uncross linked copolymer, thereby leaving said cross linked portion of said copolymer on said support, with openings in a desired pattern.
Dependencies are inferred from the claim text.