Low noise read-type diode

A Read-type diode comprising in combination:

• a Schottky-barrier forming metal contact;
• an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 .times. 10.sup.15 to 1 .times. 10.sup.17 /cm.sup.3 ;
• an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 .times. 10.sup.17 to 5 .times. 10.sup.17 /cm.sup.3, said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication;
• a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 .times. 10.sup.15 to 3 .times. 10.sup.16 /cm.sup.3, the length of said drift region being determined in accordance with a preferred operating frequency of said diode;
• and
• means for determining the effective injection current of said diode such that the ratio of average dc current to effective injection current is less than 100.

A Read-type diode comprising in combination:

• a Schottky-barrier forming metal contact;
• an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 .times. 10.sup.15 to 1 .times. 10.sup.17 /cm.sup.3 ;
• an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 .times. 10.sup.17 to 5 .times. 10.sup.17 /cm.sup.3, said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication;
• a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 .times. 10.sup.15 to 3 .times. 10.sup.16 /cm.sup.3, the length of said drift region being determined in accordance with a preferred operating frequency of said diode;
• and
• means for determining the ratio of effective injection current to junction area of said diode to be at least 30 amps/cm.sup.2.

An amplifying or oscillating circuit comprising in combination:

• a Schottky-barrier forming metal contact;
• an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 .times. 10.sup.15 to 1 .times. 10.sup.17 /cm.sup.3 ;
• an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 .times. 10.sup.17 to 5 .times. 10.sup.17 /cm.sup.3, said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication;
• a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 .times. 10.sup.15 to 3 .times. 10.sup.16 /cm.sup.3, the length of said drift region being determined in accordance with a preferred operating frequency of said diode;
• a buffer region of semiconductor material adjacent said drift region, said buffer region being heavily doped;
• and
• heat sinking means thermally coupled to said buffer region, the amount of thermal coupling between said heat sinking means and said buffer region being such that the noise measure of said circuit is less than 50 db.

A Read-type diode having a noise measure less than 50 db comprising in combination:

• a Schottky-barrier forming metal contact;
• an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 .times. 10.sup.15 to 1 .times. 10.sup.17 /cm.sup.3 ;
• an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 .times. 10.sup.17 to 5 .times. 10.sup.17 /cm.sup.3, said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication;
• a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 .times. 10.sup.15 to 3 .times. 10.sup.16 /cm.sup.3, the length of said drift region being determined in accordance with a preferred operating frequency of said diode;
• wherein said avalanche region comprises a plurality of trap means for increasing the magnitude of the effective injection current of said diode.

A Read-type diode comprising in combination:

• a Schottky-barrier forming metal contact;
• a layer of oxide upon at least portions of said metal contact;
• an avalanche region of semiconductor material adjacent said layer of oxide, said avalanche region having a doping density in the range of 5 .times. 10.sup.15 to 1 .times. 10.sup.17 /cm.sup.3 ;
• an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 .times. 10.sup.17 to 5 .times. 10.sup.17 /cm.sup.3, said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication;
• and
• a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 .times. 10.sup.15 to 3 .times. 10.sup.16 /cm.sup.3, the length of said drift region being determined in accordance with a preferred operating frequency of said diode.