Method of depositing low stress hafnium thin films
AssigneeRCA Corporation
InventorJohn Louis Vossen, Jr.
Life of this patent
Estimating the term…
Abstract
By radio frequency sputtering hafnium films on an alumina or sapphire substrate at high deposition rates and minimum substrate target bias, improved adhesion of the hafnium films to the substrate is obtained.
Claims7
A method for depositing adherent films of hafnium metal on an alumina or sapphire substrate which comprises radio frequency vacuum sputtering a hafnium target in an inert gaseous plasma atmosphere at deposition rates of over 175 Angstroms per minute onto said substrate, said substrate being maintained at minimum bias with respect to said plasma atmosphere.
A method of depositing adherent hafnium films on alumina or sapphire substrates by radio frequency sputtering which comprises:
- a. evacuating a vacuum chamber fitted for radio frequency sputtering of hafnium metal onto an alumina or sapphire substrate to a pressure of about 1 .times. 10.sup.-7 torr,
- b. adding an inert gas to a pressure of from about 60 to about 100 millitorr, and
- c. applying a voltage of about 1500 volts to a hafnium deposition target, thereby sputtering hafnium at a deposition rate of over 175 angstroms per minute and at minimum substrate voltage with respect to the plasma atmosphere.
Dependencies are inferred from the claim text.