Edgeless transistor
AssigneeRCA Corporation
InventorsWilliam Frederick Heagerty, Luke Dillon, Jr.
Life of this patent
Estimating the term…
Abstract
An MOS mesa transistor is comprised of a silicon island on an insulating substrate. The silicon island consists entirely of a source region, a drain region, and an I-shaped channel region which separates the source and drain regions. The island has a coating of an oxide of silicon thereon. A rectangular conductive gate is adjacent to the coating and above the channel region and the transverse extremities of the I-shaped channel region extend bilaterally and transversely from underneath the gate at each end thereof.
Claims10
A metal-oxide-semiconductor transistor comprising a semiconductor island, a layer of an insulator adjacent the island, a gate electrode adjacent the insulator, the island comprising heavily doped T-shaped source and drain regions of a first conductivity type, a lesser doped I-shaped channel region between said source and drain regions the channel region having a central portion comprising a channel controllable by the gate, the gate overlying the channel, a pair of end portions of the second conductivity type doped to a carrier concentration of about 10.sup.15 atoms/cm.sup.3 or less connected to each end of the channel, the channel being located only underneath the gate, the end portions each extending away from the gate and the channel and terminating away from the gate and the channel adjacent the source or the drain region, each end portion being separate and disjoined from the others.
A metal-oxide-semiconductor transistor comprising a cruciform shaped semiconductor island, a layer of an insulator adjacent the island, a gate adjacent the insulator, the island comprising heavily doped rectangular source and drain regions of the first conductivity type, a lesser doped I-shaped channel region between said source and drain regions, the channel region having a central portion comprising a channel controllable by the gate, the gate overlying the channel, a pair of end portions of the second conductivity type doped to a carrier concentration of about 10.sup.15 atoms/cm.sup.3 or less connected to each end of the channel, the channel being located only underneath the gate, the end portions each extending away from the gate and the channel and terminating away from the gate and the channel adjacent the source region or the drain region, each end portion being separate and disjoined from the other, the cruciform semiconductor island having four orthogonal, co-planar members, the two end portions comprising two diametrical members.
Dependencies are inferred from the claim text.