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US 4,052,269 AGranted
Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
AssigneeU.S. Philips Corporation
InventorsJacques Michel, Michel Iost
Life of this patent
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Abstract
A semiconductor device of the diode type having a metal-semiconductor contact, and method of manufacturing such a device. The cut-off frequency of such a diode may be a few Teraherz while it is possible by realizing coplanar contacts to assemble the device directly on hyperfrequency micro circuits. The device is suitable for mixing circuits and of course also for detection purposes. The method also permits the manufacture of PIN diodes. Application: hyperfrequency diodes. FIG. 8b.
Claims8
A method of manufacturing a semiconductor device, comprising the steps of:
- a. providing a semiconductor body comprising a surface and a semiconductor region of a certain conductivity type located at said surface;
- b. providing on said surface at said semiconductor region an electrically insulating layer comprising at least one island,
- c. forming a window in said insulating layer by the steps of:
- i. electrolytically growing a metal masking layer on the parts of said semiconductor surface not covered by said island until said masking layer over the edge of said insulating island and partly over said insulating island so that a small surface part of said insulating island is uncovered,
- ii. then removing said insulating layer at the area of said surface part by ion bombardment so as to form said window, removing said masking layer at most only partly by said ion bombardment, and
- iii. removing entirely said masking layer,
- d. providing a metal contact layer on said insulating layer and in said window, said contact layer portion located within said window forming a rectifying metal-semiconductor contact with said semiconductor surface.
4 more elements
Dependencies are inferred from the claim text.