Method of manufacturing a semiconductor device
AssigneeU.S. Philips Corporation
InventorRudolf Paulus Tijburg
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Abstract
The invention relates to a method of manufacturing a semiconductor device in which an etching process is used so as to etch regions consisting of A.sup.III B.sup.V compounds selectively relative to each other. According to the invention in the etching process an etching bath is used having a water-dissolved oxidizing material and a reducing material constituting together a redox system. In such an etching bath with redox system the selectivity is established by the choice of the concentrations of the materials and of the pH.
Claims15
A method of manufacturing a semiconductor device having a semiconductor body of A.sup.III B.sup.V semiconductor material and comprising two adjoining regions of different compositions, one of the regions being etched selectively relative to the other region in a solution of an oxidizing material in water, comprising the steps of providing an etching solution consisting of said oxidizing material and a reducing material which forms a redox system with said oxidizing material, the concentrations of said oxidizing and reducing materials, as well as the pH of the solution, being chosen to be such that the ratio of the relative etching rates of said regions is at least 10:1, and etching said body with said etching solution.
Dependencies are inferred from the claim text.