Method of producing semiconductor components and product thereof
AssigneeBBC Brown, Boveri & Company, Limited
InventorsPaul van Iseghem, Thomas Vlasak, Wolfgang Zimmermann
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Abstract
Semiconductor components containing at least one junction and at least one weakly N- or P-conducting zone containing from 10.sup.13 to 2.5 .times. 10.sup.14 doping atoms/cm.sup.3 are prepared by diffusing dopant atoms at elevated temperatures into appropriate zones of a semiconductor crystal from a nickel film containing the dopant deposited on the surface of the crystal and then cooling the in-diffused semiconductor crystal to room temperature at a rate sufficient such that the specific resistance of the weakly doped zone is not changed by the nickel atoms which diffuse into the semiconductor crystal along with the doping atom.
Claims9
In a method for producing semiconductor components with at least one junction and at least weakly N- or P-conducting zone containing from 10.sup.13 to 2.5 .times. 10.sup.14 doping atoms/cm.sup.3 and formed by diffusing the dopant atoms at elevated temperatures into appropriate zones of a semiconductor crystal from a nickel film containing said dopant deposited on the surface of said crystal, the improvement comprising:
- cooling said in-diffused semiconductor crystal to room temperature at a rate of
- A/h.sup.2 >
- (0.15 .+-. 0.05), wherein
- A = 16.6 .intg. .sub.o.sup.t exp (-2.381 eV/kT(t' ) ) dt',
- T = temperature in .degree.K. as a function of the time during cooling,
- t = time in seconds during cooling,
- h = thickness of the semiconductor crystal in cm, and
- k = Boltzman constant = 8.614 .times. 10.sup.-5 eV.degree.K..sup.-1
- sufficient such that the specific resistance of said weakly doped zone is not changed by the nickel atoms which diffuse into the semiconductor crystal along with said doping atoms, thereby forming a semiconductor component having a voltage capacity greater than 2.5 kV.
Dependencies are inferred from the claim text.