Method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer
AssigneeRCA Corporation
InventorsRichard Joseph Himics, Nitin Vithalbhai Desai, Eugene Samuel Poliniak
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Abstract
This invention pertains to a method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer wherein the poly(olefin sulfone) layer is exposed to ultra violet radiation prior to sputter etching the surface relief pattern into the metal layer.
Claims7
A method of transferring a surface relief pattern formed in a poly(olefin sulfone) layer to a metal layer in contact with said poly(olefin sulfone) layer which comprises exposing said poly(olefin sulfone) layer to ultra violet radiation and bombarding the irradiated surface with sufficient ions to substantially remove the poly(olefin sulfone) layer thereby forming the surface relief pattern in the metal layer.
A method for forming a surface relief pattern in a metal layer which comprises:
- a. exposing a poly(olefin sulfone) layer in contact with the metal layer to a modulated beam of electrons;
- b. developing the exposed poly(olefin sulfone) layer to form a surface relief pattern therein;
- c. exposing the developed poly(olefin sulfone) layer to ultra violet radiation;
- and
- d. bombarding the irradiated surface with sufficient ions to substantially remove the poly(olefin sulfone) layer and etch the surface relief pattern into the metal layer.
Dependencies are inferred from the claim text.