Avalanche transistor operating above breakdown
AssigneeRCA Corporation
InventorKern Ko Nan Chang
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Abstract
An avalanche transistor (three terminal avalanche device) is provided with a p.sup.+ electrode, for example, added to an n.sup.+ - n - n.sup.+ structure. A reverse bias junction is provided by a first voltage source connected between the p.sup.+ electrode and one of the n.sup.+ electrodes. The magnitude of the reverse bias is such as to cause impact ionization. Forward bias voltage is provided by a second source connected between the other n.sup.+ electrode and the p.sup.+ electrode. Input or control signals are applied in series with the second source to add or subtract from the voltage level of the second source, controlling the number of minority carriers injected into the n.sup.+ - n - n.sup.+ structure to cause a change in breakdown voltage and operating point of the device.
Claims3
An avalanche device comprising,
- a body of semiconductor material having a substrate of one conductivity type material with two separate regions of highly doped material of said one conductivity type on said substrate and a region of highly doped material of a second different conductivity type on said substrate,
- means for applying a reverse bias voltage between said region of material of said second conductivity type and one of said regions of highly doped material of said one conductivity type, said reverse bias voltage having a magnitude to exceed the avalanche breakdown of voltage of said substrate where the current amplification factor is many times that of unity and,
- means for applying a controllable forward bias voltage between said region of material of said second conductivity type and the other of said regions of said one conductivity type for controlling the number of minority carriers injected into the substrate to thereby change the breakdwon voltage and operating point of said device.
Dependencies are inferred from the claim text.