US 4,028,564 AGranted

Compensated monolithic integrated current source

AssigneeRobert Bosch GmbH

InventorsKlaus Streit, Adolf Kugelmann, Hartmut Seiler

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Abstract

A main semiconductor element is placed on a circuit chip; additionally, a compensating semiconductor element is placed thereon, the compensating semiconductor element being a diode, a substrate diode, a Schottky diode, a transistor with shortcircuited base emitter junction, open base transistor, or a resistor, the additional semiconductor element having one terminal connected to the main semiconductor and the other terminal either to the substrate or to a source of potential at least as large as the potential of the main element. The leakage current to be bypassed may affect the main element directly, particularly when the main element is operated in digital on-off mode, or indirectly by passing a compensating current which affects another element such as an operational amplifier, or provides directly for additional current compensating for leakage current of the main element. Placing the additional element on the same substrate and making the element of approximately the same surface extent provides for comparable passage of compensating leakage current over a wide range of semiconductor crystal temperatures.

Claims3

Dependent claims

Monolithic integrated current source comprising:

a source of power;
a first NPN transistor (70) on a substrate (13), the emitter of which is connected to the negative terminal (2) of said power source, said first NPN transistor (70) having a trough remainder current (73);
and
a compensating circuit monolithically integrated on said substrate and connected to the collector of said first NPN transister (70) to compensate said trough remainder current (73) of said NPN transistor (70), said compensation circuit comprising:
a first lateral PNP transistor (76) having two collectors, the first collector of said first lateral PNP transistor (76) being connected to the collector of said first NPN transistor (70), and the emitter of said first lateral PNP transistor (76) being connected directly to the positive terminal (4) of said power source;
a second PNP transistor (78), the emitter of said second PNP transistor (78) being connected to the base of said first lateral PNP transistor (76), the base of said second PNP transistor (78) being connected to the second collector of said first PNP transistor (76), and the collector of the second PNP transistor (78) being connected to said substrate (13);
and
a third PNP transistor (81), the base of which is left unconnected, the collector of said third transistor (81) being connected to the base of said first PNP transistor (76) and to the emitter of said second PNP transistor, and the emitter of said third transistor (81) being connected directly to the positive terminal (4) of said power source.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 05/478,974Filed 13 Jun 1974 · division
Priority: DT 214717922 Sep 1971
Granted: 7 Jun 1977
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 84/611
Characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs: combinations of…
H03F 1/302
Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters: in bipolar transistor…
H03F 3/347
With semiconductor devices only: in integrated circuits
H03K 17/14
Electronic switching or gating, i.e. not by contact-making and –breaking: modifications for compensating variations of physical values, e.g. of…